ransparent, flexible electronics made from biodegradable polymers disappear in water within three days. (Nanowerk News) The use of electronics in various forms is on the rise, from wearable devices ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...

TL;DR: KIOXIA's new UFS Ver. 4.1 embedded memory devices, featuring 8th generation BiCS FLASH with CBA technology, deliver up to 45% faster performance and 20% better power efficiency for mobile ...

Microsoft's cloud and software businesses get most of the attention these days, but it's worth paying attention to the ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices designed for automotive ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...